Process for selectively etching silicon nitride in the presence

Details Process for selectively etching silicon nitride in the presence Process for selectively etching silicon nitride in the presence

1999-01-25

2000-07-11

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438757, 216 99, H01L 21302

Patent

active

06087273&

ABSTRACT:
An improved wet etchant process is provided which has greater selectivity than existing hot phosphoric acid etching processes and which maintains a high etch rate in use. The etchant composition includes a second acid having a boiling point higher than that of the phosphoric acid.

REFERENCES:
patent: 3715249 (1973-02-01), Panousis et al.
patent: 3764423 (1973-10-01), Hauser et al.
patent: 4619033 (1986-10-01), Jastrzebski
patent: 5286344 (1994-02-01), Blalock et al.
patent: 5310457 (1994-05-01), Ziger
patent: 5607543 (1997-03-01), Eisenberg et al.
patent: 5885903 (1999-03-01), Torek et aal.
Silicon Processing for the VLSI Era, vol. 1: Process Technology,c. 1986, pp. 533-534.
Microchip Fabrication, Second Ed., c. 1997, pp. 226-227.

Affiliated with

Also associated with

Rating

Process for selectively etching silicon nitride in the presence does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for selectively etching silicon nitride in the presence , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for selectively etching silicon nitride in the presence will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-542027