Process for selectively etching diamond

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156643, 437 24, 437 25, 437 26, 437226, 437944, 437974, H01L 21312

Patent

active

053342836

ABSTRACT:
A process for selectively etching a diamond substrate comprising the steps of forming a graphitic area within a diamond substrate and selectively etching the diamond substrate with a gaseous reactant under conditions sufficient to convert the graphitic area to a gaseous product, preferably while substantially avoiding reacting with the diamond of the diamond substrate. The technique can be used to form a single crystal diamond layer, for example, using a lift-off technique.

REFERENCES:
patent: 4191734 (1980-03-01), Nelson et al.
patent: 4277293 (1981-07-01), Nelson et al.
patent: 4339304 (1982-07-01), Grigoriev et al.
patent: 4434188 (1984-02-01), Kamo et al.
patent: 4450041 (1984-05-01), Aklufi
patent: 4845533 (1989-07-01), Pryor et al.
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 4863529 (1989-09-01), Imai et al.
patent: 4883561 (1989-11-01), Gmitter et al.
patent: 4902647 (1990-02-01), Chutjian et al.
patent: 4920078 (1990-04-01), Bagley
patent: 4948629 (1990-08-01), Hacker
patent: 4952446 (1990-08-01), Lee et al.
patent: 4954365 (1990-09-01), Neifeld
patent: 4957591 (1990-09-01), Sato et al.
patent: 4997636 (1991-03-01), Prins
patent: 5006203 (1991-04-01), Purdes
patent: 5022959 (1991-06-01), Itoh et al.
patent: 5122509 (1992-06-01), Beetz, Jr. et al.
patent: 5127983 (1992-07-01), Imai et al.
patent: 5130111 (1992-07-01), Pryor
patent: 5160405 (1992-11-01), Miyauchi et al.
Prins, Preparation of ohmic contacts to semiconducting diamond, Journal of Physics D: Applied Physics, vol. 22, pp. 1562-1564 (1989).
Joshi et al., Erosion of diamond films and graphite in oxygen plasma, Journal of Materials Research, vol. 6, pp. 1484-1490 (1991).
Parikh et al., Single-crystal diamond plate liftoff achieved by ion implantation and subsequent annealing, Applied Physics Letter, vol. 61, pp. 3124-3126 (1992).
Kobashi et al., Synthesis Of Diamonds By Use Of Microwave Plasma Chemical-Vapor Deposition: Morphology And Growth Of Diamond Films, Physical Review B; 1988, vol. 38, No. 6, pp. 4067-4084.
Yarborough et al., Current Issues and Problems In the Chemical Vapor Deposition Of Diamond; Science, vol. 247, pp. 688-696.
The Molecule Of The Year; Science 1990 vol. 250, pp. 1637, 1640-1647.
Spear et al., Diamond-Ceramic Coating Of The Future; J. Am. Ceram. Soc. 72, 1989, pp. 171-191.
Yablonovitch et al., Extreme Selectivity In The Lift-Off Of Epitaxial GaAs Films; American Institute of Physics, 1987, pp. 2222-2224.
Hunn et al., Annealing Of Implantation Damage In Single Crystal Diamond; New Diamond Science and Technology, pp. 929-935.
Braunstein, et al., Radiation Damage And Annealing In Sb Implanted Diamond; Radiation Effects, 1980, vol. 48, pp. 139-144.
Prior et al., Grown Technique For Large Area Mosaic Diamond Films; Mat. Res. Soc. Symp. Proc., pp. 1-9.
Sandhu et al., Regrowth Of Damaged Layers In Diamond Produced By Ion Implantation; vol. 242, 1992, Mat. Res. Soc. Symp. Proc. vol. 162, 1990, pp. 189-194.
Robertson, et al., Epitaxial Growth Of Diamond Films On Si(111) at Room Temperature By Mass-Selected Low Energy C.sup.+ Beams; Science, vol. 243, pp. 1047-1050.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for selectively etching diamond does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for selectively etching diamond, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for selectively etching diamond will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-63235

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.