Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-10-16
1999-10-05
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 95, 117 97, 117102, 117929, C30B 2904
Patent
active
059617187
ABSTRACT:
The present invention provides a process for selectively depositing diamond films, which includes two stages of diamond deposition and the gas source used is a mixture of C.sub.x H.sub.y plus CO.sub.2 or C.sub.x H.sub.y O.sub.z plus CO.sub.2. In the period between the first and second stage, the substrate is immersed in an aqueous solution of HF plus HNO.sub.3. The obtained diamond films exhibit good crystallinity and selectivity and the growth rate is fast.
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Chen Chia-Fu
Chen Sheng-Hsiung
Hong Tsao-Ming
Kunemund Robert
National Science Council
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