Process for selectively depositing diamond films

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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117 95, 117 97, 117102, 117929, C30B 2904

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active

059617187

ABSTRACT:
The present invention provides a process for selectively depositing diamond films, which includes two stages of diamond deposition and the gas source used is a mixture of C.sub.x H.sub.y plus CO.sub.2 or C.sub.x H.sub.y O.sub.z plus CO.sub.2. In the period between the first and second stage, the substrate is immersed in an aqueous solution of HF plus HNO.sub.3. The obtained diamond films exhibit good crystallinity and selectivity and the growth rate is fast.

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