Fishing – trapping – and vermin destroying
Patent
1989-09-13
1990-10-30
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437200, 437 57, H01L 21283
Patent
active
049668684
ABSTRACT:
A process which provides for self-aligned contact hole filling leading to complete planarization and low contact resistance at the same time, without the use of additional lithographic masking procedures is described. Further, the resultant conductive plug eliminates spiking problems between aluminum and silicon during a subsequent alloying process. In an embodiment, a selective polysilicon layer is deposited and appropriately doped; a second undoped selective silicon layer is then deposited, followed by a refractory metal layer, These layers are heated to produce a self-aligned refractory metal silicide plug.
REFERENCES:
patent: 3753774 (1973-08-01), Veloric
patent: 4458410 (1984-07-01), Sugaki et al.
patent: 4463491 (1984-08-01), Goldman et al.
patent: 4569123 (1986-02-01), Ishii et al.
patent: 4800177 (1989-01-01), Nakamae
Shatas, S. C., et al., "Heatpulse Rapid . . . , ", Workshop on Refactory Metal Silicides for VLSI, Sep. 1983, pp. 1-19.
Muranka, S. P., J. Vac. Sci. Technol., 17(4), Jul.-Aug., 1980, pp. 775-792.
Ghandi, S. K., VLSI Fabrication Principles, 1983, John Wiley & Sons, pp. 432-435.
Fraser David B.
Murali Venkatesan
Wei Chih-Shih
Hearn Brian E.
Intel Corporation
Quach T. N.
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