Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-11-20
1994-01-04
Chaudhuri, Olik
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156626, 437946, 148DIG17, 134 1, C30B 2302
Patent
active
052756874
ABSTRACT:
In accordance with the invention, a contaminated III-V semiconductor surface is cleaned by the sequential steps of exposure to hydrogen plasma, chemical etching in chlorine and annealing in vacuum. In a preferred embodiment, a semiconductor of the gallium arsenide family is subjected to hydrogen plasma in an ECR system for 20-120 minutes, then, without breaking vacuum, subjected to a Cl.sub.2 chemical etch at 250.degree. C.-450.degree. C. for 1-5 minutes. Again, without breaking vacuum, the semiconductor is annealed at 200.degree. C.-600.degree. C. for 5-15 minutes. To obtain good surface reconstruction, annealing preferably takes place at a temperature 300.degree. C. or above. The semiconductor surface thus processed is atomically smooth and sufficiently clean to permit regrowth of a high quality epitaxial layer.
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Choquette Kent D.
Freund Robert S.
Hong Minghwei
Mannaerts Joseph P.
AT&T Bell Laboratories
Books Glen E.
Chaudhuri Olik
Paladugu Ramamohan Rao
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