Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-07-14
1999-01-19
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257751, 257763, H01L 2348, H01L 2940
Patent
active
058616713
ABSTRACT:
A method for fabricating seamless, tungsten filled, small diameter contact holes, has been developed. The process features initially creating a tungsten plug, in the small diameter contact hole, and filling or repairing, seams or voids in the tungsten plug, with an additional layer of selectively deposited tungsten.
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Huang Yung-Sheng
Tsai Nun-Sian
Ackerman Stephen B.
Eckert II George C.
Martin-Wallace Valencia
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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