Process for reducing halogen concentration in a material layer d

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation

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438476, 148DIG60, 148DIG147, H01L 21311

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058308024

ABSTRACT:
A process for reducing halogen concentration in a material layer (56) includes the deposition of a dielectric layer (58) overlying the material layer (56). An annealing process is carried out to diffuse halogen atoms from the material layer (56) into the overlying dielectric layer (58). Once the diffusion process is complete, the dielectric layer (58) is removed.

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