Process for promoting adhesion of a layer of photoresist on a su

Details Process for promoting adhesion of a layer of photoresist on a su Process for promoting adhesion of a layer of photoresist on a su

1990-12-03

1992-02-25

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Processing feature prior to imaging

430330, 430954, G03C 176

Patent

active

050912909

ABSTRACT:
A process for promoting photoresist adhesion on a semiconductor wafer having a previously applied photoresist layer. The process is adapted for semiconductor manufacture in which a first photoresist layer has been applied to the wafer and in which a second photoresist layer must be adhered to the first photoresist layer and to the substrate of the wafer. The process includes a steps of: baking the first photoresist layer, applying a liquid mixture including solvents to soften the first photoresist layer and an adhesion promotor for the substrate, spin drying the wafer, and applying a second photoresist layer. In an illustrative embodiment of the invention, the liquid mixture includes acetone, n-butyl acetate (NBA), and hexamethyldisilazane (HMDS) combined in a ratio of 1:1:1.

REFERENCES:
patent: 3860424 (1975-01-01), Johnson
patent: 4411735 (1983-10-01), Belani

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