Process for production of thin layers of semiconductor material

Details Process for production of thin layers of semiconductor material Process for production of thin layers of semiconductor material

1998-05-18

1999-06-01

Niebling, John F.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438522, 438526, 438530, H01L 2176, H01L 21265, H01L 21425

Patent

active

059096276

ABSTRACT:
Thin layers of semiconductor material having a high degree of surface uniformity are produced by: implantion of deuterium ions into a body of semiconductor material to form a buried region of high stress, the buried region defining a thin outer region of the body; attaching a stiffening carrier to the thin outer region of the semiconductor body; and heating the body at 350-450 degrees C. to separate the thin outer region. The separated layer is useful in the production of silicon-on-insulator semiconductor devices, and silicon-on-glass devices for liquid crystal display and microwave applications.

REFERENCES:
patent: 4684964 (1987-08-01), Pankove et al.
patent: 5198371 (1993-03-01), Li
patent: 5318652 (1994-06-01), Hocker et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5523587 (1996-06-01), Kwo

Affiliated with

Also associated with

Rating

Process for production of thin layers of semiconductor material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for production of thin layers of semiconductor material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for production of thin layers of semiconductor material will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-962161