Process for production of semiconductor substrate

Details Process for production of semiconductor substrate Process for production of semiconductor substrate

2006-12-12

2006-12-12

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S466000, C438S409000, C438S458000, C257SE21570

Reexamination Certificate

active

07148119

ABSTRACT:
A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.

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