Process for production of semiconductor substrate

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation

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438409, 438466, 438459, 438759, 438977, 438960, H01L 2176

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active

058562290

ABSTRACT:
A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.

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