Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Patent
1997-05-27
1999-01-05
Fourson, George
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
438409, 438466, 438459, 438759, 438977, 438960, H01L 2176
Patent
active
058562290
ABSTRACT:
A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.
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Sakaguchi Kiyofumi
Yonehara Takao
Canon Kabushiki Kaisha
Fourson George
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