Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-03-10
2000-11-07
Le, Vu A.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438128, 438600, H01L 2144
Patent
active
061436372
ABSTRACT:
The present invention provides a process for producing a semiconductor device, which comprises: a step of forming a metal wiring pattern on a semiconductor wafer, a step of arranging a plurality of the wiring pattern-formed semiconductor wafers and cleaning them with a cleaning solution (a cleaning step), a step of rotating the cleaned semiconductor wafers at a high speed to swing off the cleaning solution adhering to the semiconductor wafers (a swinging-off step), and a step of rinsing the cleaning solution-removed semiconductor wafers with pure water (a rinsing step). According to the present process for production of semiconductor device, the foreign matter and residue appearing in the step of formation of metal wiring pattern can be removed without incurring corrosion of the metal wiring and a semiconductor device of high quality can be produced at a low cost.
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Le Vu A.
Luu Pho
NEC Corporation
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