Process for production of high-hardness boron nitride film

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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204164, B05D 306

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active

046560521

ABSTRACT:
In a process for the production of a high-hardness boron nitride film by vacuum-depositing a boron component on a substrate from a boron-containing vacuum deposition source and simultaneously irradiating the substrate with an ion seed comprising at least nitrogen from an ion-generating source, if the atomic ratio (B/N) between boron and nitrogen supplied from the vacuum deposition source and the ion seed is adjusted within a range of from 4 to 25, the ion acceleration energy of the ion seed is adjusted to 5 to 100 KeV per atom of the ion seed and vacuum deposition and irradiation are carried out in an atmosphere of a nitrogen atom or nitrogen compound activated at an energy level lower than that of the ion seed, the hardness and quality of the film are highly improved. Furthermore, if a negative bias voltage is applied to the substrate at the vacuum deposition and irradiation with the seed ion, the film-forming speed can be increased and the hardness and quality of the film are further improved.

REFERENCES:
patent: 2920002 (1960-01-01), Auwarter
patent: 3791852 (1974-02-01), Bunshah
patent: 4412899 (1983-11-01), Beale
patent: 4540596 (1985-09-01), Nimmasadda

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