Process for producing zirconium oxide thin films

Details Process for producing zirconium oxide thin films Process for producing zirconium oxide thin films

2011-08-16

2011-08-16

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C427S255190, C427S255360

Reexamination Certificate

active

07998883

ABSTRACT:
This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapour-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction space and contacted with the substrate. According to the invention, an yttrium source material and a zirconium source material are alternately used as the metal source material so as to form an yttrium-stabilised zirconium oxide (YSZ) thin film on a substrate.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4927670 (1990-05-01), Erbil
patent: 5173474 (1992-12-01), Connell
patent: 5314759 (1994-05-01), Harkonen et al.
patent: 5420320 (1995-05-01), Zenk et al.
patent: 5447909 (1995-09-01), Takahashi et al.
patent: 5496597 (1996-03-01), Soininen et al.
patent: 5711811 (1998-01-01), Suntola et al.
patent: 5820664 (1998-10-01), Gardiner et al.
patent: 5912068 (1999-06-01), Jia
patent: 5923056 (1999-07-01), Lee et al.
patent: 6060755 (2000-05-01), Ma et al.
patent: 6063443 (2000-05-01), Urchikawa et al.
patent: 6203613 (2001-03-01), Gates et al.
patent: 6207589 (2001-03-01), Ma et al.
patent: 6238734 (2001-05-01), Senzaki et al.
patent: 6248605 (2001-06-01), Harkonen et al.
patent: 6265222 (2001-07-01), DiMeo et al.
patent: 6297539 (2001-10-01), Ma et al.
patent: 6342277 (2002-01-01), Sherman
patent: 6383669 (2002-05-01), Leedham et al.
patent: 6407435 (2002-06-01), Ma et al.
patent: 6503561 (2003-01-01), Senzaki et al.
patent: 6537613 (2003-03-01), Senzaki et al.
patent: 6548424 (2003-04-01), Putknonen
patent: 6632279 (2003-10-01), Ritala et al.
patent: 6777353 (2004-08-01), Putkonen
patent: 6780704 (2004-08-01), Raaijmakers et al.
patent: 6797337 (2004-09-01), Dando et al.
patent: 6844271 (2005-01-01), Loftin et al.
patent: 6858524 (2005-02-01), Haukka et al.
patent: 6858546 (2005-02-01), Niinisto et al.
patent: 6884719 (2005-04-01), Chang et al.
patent: 6884902 (2005-04-01), Takamori et al.
patent: 6932867 (2005-08-01), Ritala et al.
patent: 6969539 (2005-11-01), Gordon et al.
patent: 6984591 (2006-01-01), Buchanan et al.
patent: 7108747 (2006-09-01), Leskela et al.
patent: 7198820 (2007-04-01), Harkonen et al.
patent: 7250367 (2007-07-01), Vaartstra et al.
patent: 7351658 (2008-04-01), Putkonen
patent: 7377976 (2008-05-01), Ritala et al.
patent: 7432139 (2008-10-01), Currie
patent: 7470470 (2008-12-01), Senzaki et al.
patent: 7485340 (2009-02-01), Elers et al.
patent: 7485349 (2009-02-01), Koh et al.
patent: 7501153 (2009-03-01), Yamada et al.
patent: 7507848 (2009-03-01), Gordon et al.
patent: 7514119 (2009-04-01), Ma et al.
patent: 7754621 (2010-07-01), Putkonen
patent: 2003/0072882 (2003-04-01), Niinisto et al.
patent: 2005/0006799 (2005-01-01), Gregg et al.
patent: 2005/0037154 (2005-02-01), Koh et al.
patent: 2005/0075510 (2005-04-01), Meiere et al.
patent: 2005/0271813 (2005-12-01), Kher et al.
patent: 2006/0046521 (2006-03-01), Vaartstra et al.
patent: 2006/0088660 (2006-04-01), Putkonen et al.
patent: 2007/0148347 (2007-06-01), Hatanpaa et al.
patent: 2007/0148350 (2007-06-01), Rahtu et al.
patent: 2008/0014762 (2008-01-01), Putkonen
patent: 2008/0026578 (2008-01-01), Shenai-Khatkhate et al.
patent: 2008/0072819 (2008-03-01), Rahtu et al.
patent: 2008/0102205 (2008-05-01), Barry et al.
patent: 2008/0173917 (2008-07-01), Patz et al.
patent: 2008/0176375 (2008-07-01), Erben et al.
patent: 2008/0282970 (2008-11-01), Heys et al.
patent: 2009/0035946 (2009-02-01), Pierreux et al.
patent: 2009/0269941 (2009-10-01), Raisanen et al.
patent: 2010/0112211 (2010-05-01), Xu et al.
patent: 0 387 892 (1990-09-01), None
patent: 105313 (1999-12-01), None
patent: 981959 (2000-03-01), None
patent: 63-015442 (1988-01-01), None
patent: 64-027131 (1989-01-01), None
patent: WO 00/15865 (2000-03-01), None
patent: WO 2005/124849 (2005-12-01), None
patent: WO 2006/131751 (2006-12-01), None
patent: WO 2007/140813 (2007-12-01), None
patent: WO 2007/141059 (2007-12-01), None
Garcia et al, “Preparation of YSZ layers by MOCVD: influence of experimental parameters on the morphology of the films,”Journal of Crystal Growth, vol. 156, (1995), pp. 426-432.
Huang et al., “Preparation and Characterization of Thin Films of MgO, AI2O3and MgAI2O4by Atomic Layer Deposition,”Journal of Electronic Materials, vol. 22, o. 2, pp. 215-220 (1993).
Huang et al., “The Surface Morphology of Atomic layer Deposited Magnesia”,J. of Materials Science Letters, vol. 12, No. 18, pp. 1444-6 (1993).
Ilskola et al., “Functional surface groups for single-site heterogeneous α-olefin polymerization catalysts,”Applied Surface Science121, 122, pp. 372-377 (1997).
Matthée et al., “Orientation relationships of epitaxial oxide buffer layers on silicon (100) for high-temperature superconducting Yba2Cu3O7-x films,”Appl. Phys. Lett., vol. 61, No. 10, (1992), pp. 1240-1242.
Mölsä et al., “Growth of Yttrium Oxide Thin Films from β-Diketonate Precursor,”Advanced Materials for Optics and Electronics, vol. 4, (1994), pp. 389-400.
Putkonen et al., “Enhanced growth rate in atomic layer epitaxy deposition of magnesium oxide thin films,”J Mater Chem, 10, pp. 1857-1861 (2000).
Ritala et al., “Zirconium dioxide thin films deposited by ALE using zirconium tetrachloride as precursor,”Applied Surface Science, vol. 75, (1994), pp. 333-340.

Affiliated with

Also associated with

Rating

Process for producing zirconium oxide thin films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing zirconium oxide thin films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing zirconium oxide thin films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2697215