Process for producing yttrium oxide thin films

Details Process for producing yttrium oxide thin films Process for producing yttrium oxide thin films

2008-04-01

2008-04-01

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S778000, C427S255310

Reexamination Certificate

active

10917906

ABSTRACT:
This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapour-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction space and contacted with the substrate. According to the invention, an yttrium source material and a zirconium source material are alternately used as the metal source material so as to form an yttrium-stabilised zirconium oxide (YSZ) thin film on a substrate.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4927670 (1990-05-01), Erbil
patent: 5173474 (1992-12-01), Connell
patent: 5314759 (1994-05-01), Harkonen et al.
patent: 5447909 (1995-09-01), Takahashi et al.
patent: 5496597 (1996-03-01), Soininen et al.
patent: 5711811 (1998-01-01), Suntola et al.
patent: 5912068 (1999-06-01), Jia
patent: 5923056 (1999-07-01), Lee et al.
patent: 6060755 (2000-05-01), Ma et al.
patent: 6203613 (2001-03-01), Gates et al.
patent: 6207589 (2001-03-01), Ma et al.
patent: 6248605 (2001-06-01), Harkonen et al.
patent: 6265222 (2001-07-01), DiMeo et al.
patent: 6297539 (2001-10-01), Ma et al.
patent: 6383669 (2002-05-01), Leedham et al.
patent: 6407435 (2002-06-01), Ma et al.
patent: 6548424 (2003-04-01), Putknonen
patent: 6858546 (2005-02-01), Niinisto et al.
patent: 2003/0072882 (2003-04-01), Niinisto et al.
patent: 0 387 892 (1990-09-01), None
patent: 105313 (1999-12-01), None
patent: 981959 (2000-03-01), None
patent: 63015442 (1988-01-01), None
patent: 64-027131 (1989-01-01), None
patent: WO 00/15865 (2000-03-01), None
Kawai et al. (64-027131); Jan. 1989 (English Abstract).
Garcia et al., “Preparation of YSZ layers by MOCVD: influence of experimental parameters on the morphology of the films,”Journal of Crystal Growth, vol. 156, (1995), pp. 426-432.
Matthée et al., “Orientation relationships of epitaxial oxide buffer layers on silicon (100) for high-temperature superconducting Yba2Cu3O7-x films,”Appl. Phys. Lett., vol. 61, No. 10, (1992), pp. 1240-1242.
Mölsä et al., “Growth of Yttrium Oxide Thin Films from β-Diketonate Precursor,”Advanced Materials for Optics and Electronics, vol. 4, (1994), pp. 389-400.
Ritala et al., “Zirconium dioxide thin films deposited by ALE using zirconium tetrachloride as precursor,”Applied Surface Science, vol. 75, (1994), pp. 333-340.

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