Process for producing ultrathin homogenous metal layers

Details Process for producing ultrathin homogenous metal layers Process for producing ultrathin homogenous metal layers

2005-09-20

2005-09-20

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S687000

Reexamination Certificate

active

06946386

ABSTRACT:
A method of forming an ultrathin homogenous metal layer that serves as base metallization for formation of contact locations and/or contact pads and/or wirings of an integrated electronic component. The method includes the steps of depositing a first metal layer on a substrate at least in regions, and producing a second metal layer on the first metal layer at least in regions, component(s) of the second metal layer have a more positive redox potential than component(s) of the first metal layer, wherein ultrathin homogenous deposition of the second metal layer is effected by wet-chemical, current-free, electrochemical redox processes by element exchange from one or more metal salts as oxidant with at least a top metal atomic layer of the first metal layer as reductant.

REFERENCES:
patent: 6511912 (2003-01-01), Chopra et al.

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