Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-01-14
2000-05-02
Nelms, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438662, 438795, 438798, 438478, 427553, 427565, 427596, H01L 2144
Patent
active
060572337
ABSTRACT:
To produce a high quality thin film by effectively removing the particles from the emitted substance and the oxygen retained under a high vacuum during the production of the thin film by laser ablation, there is provided a process for producing a thin film on a substrate by laser ablation in a vacuum chamber in which a laser beam is irradiated to a target to cause emission of a substance from the target and allowing the emitted substance to deposit on the substrate to grow a thin film on the substrate by laser ablation, the process including irradiating an ion beam to at least one of the substrate and a plume of the emitted substance formed between the substrate and the target.
REFERENCES:
patent: 5406906 (1995-04-01), Rimai et al.
patent: 5490912 (1996-02-01), Warner et al.
patent: 5650377 (1997-07-01), Kern et al.
patent: 5689428 (1997-11-01), Sauerbrey et al.
patent: 5731046 (1998-03-01), Mistry et al.
Hanabusa Mitsugu
Hasegawa Hiroshi
Nakamura Naoki
Berry Renee R.
Hanabusa Mitsugu
Nelms David
Toyota Jidosha & Kabushiki Kaisha
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