Process for producing the field oxide of an integrated circuit

Details Process for producing the field oxide of an integrated circuit Process for producing the field oxide of an integrated circuit

1983-06-29

1984-06-19

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29571, 29580, 148187, 156646, 156653, 156657, 1566591, 156662, 252 791, 427 85, 427 93, 430313, 430317, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044551932

ABSTRACT:
Process for producing the field oxide of an integrated circuit, wherein it comprises the following successive stages:

REFERENCES:
patent: 4378627 (1983-04-01), Jambotkar
patent: 4394196 (1983-07-01), Iwai
patent: 4407851 (1983-10-01), Kurosawa et al.
IBM Technical Disclosure Bulletin, vol. 23, No. 4, Sep. 1980, pp. 1405-1408, Device Isolation by Using a Narrow SiO.sub.2 Trench , C. T. Horng and R. R. Konian.
IEEE Transactions on Electron Devices, vol. Ed-29, No. 4, Apr. 1982, pp. 541-547, Direct Moat Isolation for VLSI, K. L. Wang et al.
International Electron Devices Meeting, Washington, D.C., Dec. 7-9, 1981, IEEE, pp. 384-387, A New Bird's-Beak Free Field Isolation Technology for VLSI Devices, Kei Kurosawa et al.
IEEE Journal of Solid State Circuits, vol. SC-17, No. 2, Apr. 1982, pp. 191-197, Selective Polysilicon Oxidation Technology for VLSI Isolation, Naohiro Matsukawa et al.
IBM Technical Disclosure Bulletin, vol. 21, No. 5, Oct. 1978, pp. 1868-1869, Dielectric Isolation Planarization, T. A. Bartush et al.

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