Process for producing storage-stable silicon wafer surfaces havi

Details Process for producing storage-stable silicon wafer surfaces havi Process for producing storage-stable silicon wafer surfaces havi

1992-10-14

1994-10-04

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437974, 148 33, H01L 21302

Patent

active

053526376

ABSTRACT:
A process for producing silicon wafers which have a storage-stable surface and which can be thermally oxidized directly, that is to say, without a prior HF immersion bath, and without the addition of halogen-containing gases, it being possible to achieve an equal or better oxidation result than that achieved by including these measures.

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"Silicon Gate Oxide Thickness Uniformity During HCl Oxidation" by Osburn et al., J. Electrochem. Soc., vol. 138, Jan. 1991, 268-277.
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