Process for producing silicon single crystal layer and...

Details Process for producing silicon single crystal layer and... Process for producing silicon single crystal layer and...

2007-06-12

2007-06-12

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S003000, C117S013000, C117S020000

Reexamination Certificate

active

10506534

ABSTRACT:
A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these gases at a temperature in a range of 600° C. to 950° C. (here, the temperature should not be greater than 950° C.). By doing this, a quality of a surface of the silicon single-crystal layer is improved.

REFERENCES:
patent: 5279973 (1994-01-01), Suizu
patent: 5502010 (1996-03-01), Nadahara et al.
patent: 0 973 190 (2000-01-01), None
patent: 64-001393 (1989-01-01), None
patent: 11-001393 (1999-01-01), None
patent: 11-135514 (1999-05-01), None
patent: 2000-091342 (2000-03-01), None
patent: 2001-044207 (2001-02-01), None

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