Process for producing silicon semiconductor wafers with low defe

Details Process for producing silicon semiconductor wafers with low defe Process for producing silicon semiconductor wafers with low defe

1997-08-26

1999-08-10

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

117 20, 117 66, 117 73, 117 76, 117916, 117930, 117932, C30B 2906

Patent

active

059353201

ABSTRACT:
A process for producing silicon wafers with low defect density is one wherein a) a silicon single crystal having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 is produced by molten material being solidified to form a single crystal and is then cooled, and the holding time of the single crystal during cooling in the temperature range of from 850.degree. C. to 1100.degree. C. is less than 80 minutes; b) the single crystal is processed to form silicon wafers; and c) the silicon wafers are annealed at a temperature of at least 1000.degree. C. for at least one hour. Also, it is possible to prepare a silicon single crystal based upon having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 and a nitrogen doping concentration of at least 1*10.sup.14 /cm.sup.3 for (a) above.

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Proceedings of the 18th International Conference on Defects in Semiconducs, Party, Sendai, Japan, Jul. 23-28, 1995, pp. 1731-1735.
Journal of Electrochemical Society, vol. 142, No. 9, Sep. 1995, pp. 3189-3192.

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