Process for producing silicon oxide films for...

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2011-01-25

2011-01-25

Meeks, Timothy H (Department: 1792)

Coating processes

Coating by vapor, gas, or smoke

Reexamination Certificate

active

07875312

ABSTRACT:
The present invention is directed to a method for depositing a silicon oxide layer on a substrate by CVD. The reaction of an organoaminosilane precursor where the alkyl group has at least two carbon atoms in the presence of an oxidizing agent allows for the formation of a silicon oxide film. The organoaminosilanes are represented by the formulas:The use of diisopropylaminosilane is the preferred precursor for the formation of the silicon oxide film.

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