Process for producing silicon devices

Details Process for producing silicon devices Process for producing silicon devices

1982-05-03

1984-07-24

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617R, 156DIG64, 156DIG73, 156DIG88, 148175, 427 531, C30B 108

Patent

active

044616708

ABSTRACT:
Dielectrically isolated regions of single crystal silicon are produced through the use of a specific melting process. In this process, a substrate having regions of single crystal silicon contacting regions of non-single crystal silicon that overlie a dielectric material are treated. In particular, the entire region(s) of non-single crystal silicon is melted utilizing primarily radiant energy. Cooling is then initiated and the molten silicon is converted into a region of single crystal material. Isolation is completed by removing the appropriate regions of single crystal silicon.

REFERENCES:
patent: 3993533 (1976-11-01), Milnes et al.
patent: 4068814 (1978-01-01), Anthony et al.
patent: 4174217 (1979-11-01), Flately
patent: 4184065 (1980-01-01), Nagashina
patent: 4227970 (1980-10-01), Howell, Jr. et al.
patent: 4371421 (1983-02-01), Fan et al.

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