Process for producing semiconductor strain-sensitive sensor

Details Process for producing semiconductor strain-sensitive sensor Process for producing semiconductor strain-sensitive sensor

1995-04-26

1997-08-05

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

3612834, 438384, 438751, 438754, H01L 2146

Patent

active

056542445

ABSTRACT:
In the present invention, a first protective layer formed over a diaphragm is prevented from being etched unnecessarily at the time of etching a second protective layer, and the detection accuracy of the diaphragm is improved.
In a process for producing a semiconductor pressure sensor, a first protective layer 4, a metal layer 8 and a second protective layer 6 are successively formed by deposition over a diaphragm 1a, and the second protective layer 6 is removed by etching so that the second protective layer 6 is left on a predetermined portion of an electrode 5. Since the metal layer 8 acts as an etching stopper layer at the time of removing the second protective layer 6 by etching, the first protective layer 4 over the diaphragm 1a is prevented from being etched. The metal layer 8 is removed by etching thereafter so that only the first protective layer 4 is formed over the diaphragm 1a.

REFERENCES:
patent: 3938175 (1976-02-01), Jaffe et al.
patent: 4597003 (1986-06-01), Aine et al.
patent: 4783237 (1988-11-01), Aine et al.

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