Process for producing Semiconductor silicon wafer

Details Process for producing Semiconductor silicon wafer Process for producing Semiconductor silicon wafer

1994-07-22

1996-07-09

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

4272481, 4273977, 427402, 437 12, 437949, C23C 1624

Patent

active

055342949

ABSTRACT:
Provided is a process for producing a semiconductor silicon wafer by which an intrinsic gettering effect can be improved and at the same time the top side can be made free from faults. A silicon ingot is produced and sliced to obtain silicon wafers. Then, a polycrystal silicon depositing film is formed on one side of a silicon wafer, which is subjected to a heat treatment in an inert gas, a reducing gas or a mixture thereof to discharge oxygen from the vicinity of the other side. Alternatively, after discharging oxygen from the silicon wafer by a heat treatment, a polycrystal silicon depositing film may be formed on one side of the silicon wafer.

REFERENCES:
patent: 4053335 (1977-10-01), Hu
patent: 5189508 (1993-02-01), Tachimori et al.

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