Process for producing semiconductor layers based on III-V...

Details Process for producing semiconductor layers based on III-V... Process for producing semiconductor layers based on III-V...

2005-08-09

2005-08-09

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S603000, C438S933000

Reexamination Certificate

active

06927155

ABSTRACT:
In the process for producing low-defect semiconductor layers based on III-V nitride semiconductor material, a substrate (1) made from a material which is not based on III-V nitride semiconductors is provided, and then a mask layer (2) is applied to the substrate in order to form unmasked regions (2c) and masked regions (2a,2b) on the substrate. Then, starting from the unmasked regions (2c) of the substrate (1), the III-V nitride semiconductor layer (3) is grown. To avoid the formation of stress-induced cracks during the cooling phase from the growth temperature to room temperature, the mask layer (2) is formed on the substrate (1) in such a manner that some of the masked regions (2b) are wide enough to prevent the III-V nitride semiconductor layer (3) from growing together over these wide masked regions (2b), whereas the III-V nitride semiconductor layer does grow together only over the other, narrow masked regions (2a).

REFERENCES:
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6261929 (2001-07-01), Gehrke et al.
patent: 6844251 (2005-01-01), Shenai et al.
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patent: 1 111 663 (2001-06-01), None
patent: WO 00 55893 (2000-09-01), None
patent: WO 01 27980 (2001-04-01), None

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