Process for producing semiconductor device using optical...

Details Process for producing semiconductor device using optical... Process for producing semiconductor device using optical...

2009-03-26

2010-12-21

Geyer, Scott B (Department: 2812)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

Reexamination Certificate

active

07855155

ABSTRACT:
An optical absorption layer comprised of a substance having a band gap energy smaller than that of GaN is formed on an implanted region formed in a pGaN layer as a ground layer. There is performed an annealing step from an upper surface of a substrate with predetermined light such as infrared light, a red light, or the like, which has energy smaller than the band gap energy of the pGaN layer. The optical absorption layer has an absorption coefficient of the light in the annealing step larger than that of the pGaN layer. Accordingly, it is possible to selectively perform a heat treatment on a region directly under the optical absorption layer or a region in a vicinity thereof (the implanted region).

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Y. Irokawa et al., “Implantation temperature dependence of Si activation in AIGaN,” Appl. Phys. Lett. 88 (2006) 182106.
S. Matsunaga et al., “Silicon implantation in epitaxial GaN layers: Encapsulant annealing and electrical properties,” J. Appl. Phys. 95 (2004) 2461.
J. A. Fellows, “Electrical activation studies of GaN implanted with Si from low to high dose,” Appl. Phys. Lett. 80 (2002) 1930.

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