Process for producing rods or blocks of semiconductor material a

Details Process for producing rods or blocks of semiconductor material a Process for producing rods or blocks of semiconductor material a

1994-07-05

1996-02-20

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 33, 117910, 117932, C30B 1508

Patent

active

054920795

ABSTRACT:
The process includes processing a molten phase of semiconductor material ering a solid phase of the material and having a free surface opposite this solid phase, into which, during the crystallization procedure, energy is radiated and material is fed in in granular form, which material floats and is melted. As a result, at the opposite solid/liquid interface, material grows on the solid phase which is drawn downwards in accordance with the growth rate. The process allows mono- or polycrystalline rods or blocks to be obtained. The main advantages of the process are that it can be carried out without melting vessels, it is possible to use granular material, and the energy balance is favorable because of the small amounts of melt.

REFERENCES:
patent: 3194691 (1965-07-01), Dikhoff
patent: 3998686 (1976-12-01), Meiling et al.
patent: 4312700 (1982-01-01), Helmreich et al.
patent: 4358416 (1982-11-01), Yarwood et al.
patent: 4824519 (1989-04-01), Ostrogorsky
patent: 4834832 (1989-05-01), Stock et al.
patent: 5108720 (1992-04-01), Bourbina et al.

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