Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Patent
1997-03-24
1999-01-12
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
117 12, 257 3, C30B 2300
Patent
active
058588620
ABSTRACT:
A process of producing quantum fine wires, it is called silicon nanowires, too, which allows silicon quantum fine wires to grow into desirable shapes. In this process, gold is deposited on a silicon substrate to a thickness of 5 nm or less, and the silicon substrate is heated at a temperature of 450.degree. C. to 650.degree. C. in an atmosphere containing silane gas at a pressure less than 0.5 Torr, whereby drops of a molten alloy of silicon and gold are formed on the surface of the silicon substrate and the silane gas is decomposed by the action of the molten alloy drops as catalyst, to allow silicon quantum fine wires to grow into such desirable shapes as to be uniform in diameter without any bending.
REFERENCES:
patent: 5381753 (1995-01-01), Okajima et al.
Jensen et al., "Thermal Chemical Vapor Deposition," in Thin Film Processes II, edited by Vossen et al., Academic Press, p. 333 (no month given), 1991 .
Gosain Dharam Pal
Nakagoe Miyako
Usui Setsuo
Westwater Jonathan
Bowers Charles
Christianson Keith
Sony Corporation
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