Process for producing polysilicon film

Details Process for producing polysilicon film Process for producing polysilicon film

2004-09-17

2008-08-19

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

C117S008000, C117S009000, C117S931000

Reexamination Certificate

active

07413604

ABSTRACT:
The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.

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