Process for producing p-doped and epitaxially coated...

Details Process for producing p-doped and epitaxially coated... Process for producing p-doped and epitaxially coated...

2007-10-11

2008-12-30

Hiteshew, Felisa C (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S013000, C117S020000

Reexamination Certificate

active

07470323

ABSTRACT:
The Czochralski method is used for producing p−-doped and epitaxially coated semiconductor wafers from silicon, wherein a silicon single crystal is pulled, and during the pulling is doped with boron, hydrogen and nitrogen, and the single crystal thus obtained is processed to form p−-doped semiconductor wafers which are epitaxially coated.

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patent: 6843848 (2005-01-01), von Ammon et al.
patent: 2006/0225639 (2006-10-01), Ono et al.
patent: 2006/0225640 (2006-10-01), Ono et al.
patent: 1136596 (2001-09-01), None
patent: 1143045 (2001-10-01), None
patent: 1598452 (2005-11-01), None

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