Process for producing optical recording medium sputtering method

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

20419215, 20419222, 20419223, 2041922, C23C 1434

Patent

active

055890407

ABSTRACT:
An optical recording medium having on a substrate an optical recording film and an inorganic dielectric film containing a target element of a metal or metalloid, such as Si or Ge, is produced by forming the inorganic dielectric film by subjecting a sputtering target comprising a crystal of the target element to DC sputtering in a reactive gas atmosphere. Abnormal discharge leading to inferior products and a lower productivity is suppressed by constituting the sputtering target to have a sputtering surface conforming to a lattice plane of the crystal free from a void allowing intrusion of an atom, ion or radical originating from the reactive gas into the unit lattice. In case of an Si single crystal having a diamond structure, the sputtering surface is preferably conformed to a lattice plane represented by Miller indices (1,0,0) or (1,1,1). The sputtering target is preferably provided with a chamfer adjacent to the sputtering surface.

REFERENCES:
patent: 3630881 (1971-12-01), Lester et al.
patent: 4551216 (1985-11-01), Argyo
patent: 4834856 (1989-05-01), Wehner
patent: 4978437 (1990-12-01), Wirz
patent: 5087297 (1992-02-01), Poutiquen
patent: 5091267 (1992-02-01), Asano et al.
patent: 5151295 (1992-09-01), Kawahara et al.
G. Wehner, "Controlled . . . Ions", Physical Review, vol. 10, No. 3, May 1, 1956, pp. 690-704.
"Influence of Oxygen Content in Sputtering Targets on Co-Cr Film Properties", Tadokoro, et al., IEEE Translation Journal of Magnetics in Japan, vol. 4(1), Jan. 1989, pp. 32-38.
"Plasma assisted physcial vapor deposition processes: A review", Bunshah, et al., Journal of Vacuum Science & Technology, vol. 3(3), Part 1, May-Jun. 1985, pp. 553-560.
Patent Abstracts of Japan, vol. 13, No. 39 (C-563) (3387), Jan. 27, 1989.
Patent Abstracts of Japan, vol. 14, No. 146 (C-704) (4089), Mar. 20, 1990.
Patent Abstracts of Japan, vol. 11, No. 362 (P-640), Nov. 26, 1987.
Patent Abstracts of Japan, vol. 12, No. 198 (C-502) (3045), Jun. 8, 1988.
Patent Abstracts of Japan, vol. 15, No. 332 (C-0861), Aug. 23, 1991.
Bloom, et al., "The Preparation of Large-Area Silicon Cathodes for Use in Reactive Sputtering", Journal of the Electrochemical Society (Oct. 1965), pp. 1050-1051.
Sze, Physics of Semiconductor Devices, 2nd Ed., (1981), p. 11.
Chapman, Glow Discharge Processes (1980), pp. 389-391, 393.
Serikawa, et al., "Effect of N.sub.2 -Ar Mixing on the Reactive Sputtering Characteristics of Silicon", Thin Solid Films, vol. 101, No. 1 (Mar. 1983), pp. 1-5.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for producing optical recording medium sputtering method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing optical recording medium sputtering method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing optical recording medium sputtering method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1139333

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.