Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1995-12-20
1996-12-31
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, 20419222, 20419223, 2041922, C23C 1434
Patent
active
055890407
ABSTRACT:
An optical recording medium having on a substrate an optical recording film and an inorganic dielectric film containing a target element of a metal or metalloid, such as Si or Ge, is produced by forming the inorganic dielectric film by subjecting a sputtering target comprising a crystal of the target element to DC sputtering in a reactive gas atmosphere. Abnormal discharge leading to inferior products and a lower productivity is suppressed by constituting the sputtering target to have a sputtering surface conforming to a lattice plane of the crystal free from a void allowing intrusion of an atom, ion or radical originating from the reactive gas into the unit lattice. In case of an Si single crystal having a diamond structure, the sputtering surface is preferably conformed to a lattice plane represented by Miller indices (1,0,0) or (1,1,1). The sputtering target is preferably provided with a chamfer adjacent to the sputtering surface.
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Canon Kabushiki Kaisha
Nguyen Nam
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