Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-02-27
2000-01-04
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438624, 438629, 438638, 438637, 438690, H01L 214763
Patent
active
060109564
ABSTRACT:
An improved process for producing a multilayer wiring board that has a plurality of conductor patterns and an interlevel dielectric layer on at least one surface of a substrate, with via holes or trench-like channels being provided at specified sites of said interlevel dielectric layer to establish an electrical interconnection between said conductor patterns, wherein prior to the provision of said via holes or trench-like channels, a coating having resistance to sandblasting is formed in a pattern over the interlevel dielectric layer and then sandblasting is performed to remove the interlevel dielectric layer in selected areas to form the via holes or trench-like channels and, thereafter, the coating having resistance to sandblasting is removed, followed by the provision of a conductive layer.
REFERENCES:
patent: 4347306 (1982-08-01), Takeda et al.
patent: 5485038 (1996-01-01), Licari et al.
patent: 5698470 (1997-12-01), Yamaguchi
Takezo et al., Patent Abstracts of Japan, vol. 4, No. 156 (P-034) Oct. 31, 1980 JP55-103354.
Obiya Hiroyuki
Shiroyama Taisuke
Takahashi Toru
Takiguchi Yoshikazu
Tazawa Kenji
Berry Renee R
Bowers Charles
Tokyo Ohka Kogyo Co. Ltd.
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