Process for producing monocrystalline group II-IV or group III-V

Details Process for producing monocrystalline group II-IV or group III-V Process for producing monocrystalline group II-IV or group III-V

1989-09-14

1991-03-12

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566161, 1566162, 1566163, 1566164, 15661641, 156DIG83, 252 623GA, C30B 1104

Patent

active

049990829

ABSTRACT:
This disclosure relates to a process for producing monocrystalline Group II-IV or Group III-V compounds from the polycrystalline form of said Group II-IV or Group III-V compound, said process comprising coating the interior surface of a crucible with a powdered solid having a melting point higher than the polycrystalline form of the compound, placing an amount of polycrystalline compound into the coated crucible, heating the crucible to produce a melt while maintaining the powder in solid form and cooling the crucible to produce a solid compound. The preferred powdered solid is pyrolitic boron nitride. The process may be used to produce, inter alia, semi-insulating gallium arsenide having a neutral EL2 concentration greater than or equal to about 0.85.times.10.sup.16 cm.sup.-3 and a dislocation density between about 500 cm.sup.-2 and 7,800 cm.sup.-2.

REFERENCES:
patent: 3245674 (1966-04-01), Baer et al.
patent: 3630906 (1971-12-01), Willardson et al.
patent: 3777009 (1974-12-01), Menashi et al.
patent: 4058579 (1977-11-01), Lashway
patent: 4083748 (1978-04-01), Gault
patent: 4264406 (1981-04-01), Hacskaylo
patent: 4404172 (1983-09-01), Gault
patent: 4521272 (1985-06-01), Gault
patent: 4840699 (1989-06-01), Khattak et al.
patent: 4923561 (1990-05-01), Chemans et al.
Blum et al., "Growing Single Crystals of High-Melting, Decomposable Compounds", IBM Technical Bulletin, vol. 9, No. 12, May 1967, pp. 1674-1676.
Willardson et al., "Semiconductors and Semimetals, vol. 20, Semi-Insulating GaAs", Academic Press, Inc., Orlando, 1984, pp. 36 to 40.
Crystal Growth: A Tutorial Approach (Proceedings of the Third International Summer School on Crystal Growth, edited by Bardsley et al., 1977, pp. 157-158 and 166-167 and 102-106).
Handbook on Semiconductor Materials, Properties and Preparation, (Series Ed. T. S. Moss, vol. Ed. S. P. Keller, vol. III, pp. 258-259, 2nd Edition, 1983).
"Liquid Encapsulated, Vertical Bridgman Growth of Large Diameter, Low Dislocation Density, Semi-Insulating GaAs" (Journal of Crystal Growth, Hoshikawa et al., vol. 94 (1989)), pp. 643-650.
D. C. Look et al., "Uniformity of 3-in., Semi-Insulating Vertical-Gradient-Freeze GaAs Wafers", J. Appl. Phys. 66(2), Jul. 15, 1989.
Litton Airtron GaAs specification sheet, 1985 (two pages).
Showa Denko K.K. GaAs substrate specification, Aug. 22, 1989 (two pages).
S. K. Brierley et al., "Correlation Between Implant Activation and EL2 in Semi-Insulating GaAs", 5th Conf. on Semi-insulating III-V Materials, Malmo, Sweden, 1988.
Crystal Growth (edited by Bryan Pamplin, First Ed. 1975, Second Ed. 1980, pp. 6-9, 284-287).
Chang et al., "Vertical Gradient Freeze Growth of Gallium Arsenide and Naphthalene: Theory and Practice", Journal of Crystal Growth 22 (1974), pp. 247-258.
Abernathy et al., "Growth and Characterization of Low Defect GaAs by Vertical Gradient Freeze", Journal of Crystal Growth, 85 (1987) pp. 106-115.
Clemans and Conway, "Vertical Gradient Freeze Growth of 75 mm Diameter Semi-Insulating GaAs" from the Proceedings of the Fifth Conference on Semi-Insulating Materials in Malmo, Sweden, 1988.
Clemans et al., "The Production of High Quality, III-V Compound Semiconductor Crystals", AT & T Technical Journal, Jul., Aug., vol. 65, Issue IV, pp. 87 & 97.
Gault et al., "A Novel Application of the Vertical Gradient Freeze Method to the Growth of High Quality III-V Crystals", Journal of Crystal Growth, 74 (1986) pp. 491-506.
Swiggard, "Liquid Encapsulated Vertical Zone Melt (VZM) Growth of GaAs Crystals" Journal of Crystal Growth, 94 (1989).
Bourret et al., "Vertical Seeded Melt-Growth of GaAs", submitted to the Ninth Annual Conference on Crystal Growth, Aug. 20-25, 1989.
Kremer et al., "Vertical Bridgman Growth of GaAs", Materials Research Society Symposium Proceedings, Fall Meeting 1988, vol. 144, printed 1989.
Kremer et al., "Semi-Insulating GaAs Grown by the Vertical Bridgman Method", Proceedings of the 1988 U.S. Conference on GaAs Manufacturing Technology, 69.
Kremer et al., "Low-Dislocation Density GaAs Grown by the Vertical Bridgman Method", Proceedings of the Industry-University Advanced Materials Conference, presented Mar. 7, 1989.
Kremer et al., "Low Dislocation Density GaAs Grown by the Vertical Bridgman Technique", Proceedings of the Colorado Microelectronics Conference, Presented Mar. 31, 1989.

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