Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-07-01
2008-07-01
Everhart, Caridad M (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S774000, C257SE23161, C257SE21171, C257SE21175, C438S678000
Reexamination Certificate
active
11051548
ABSTRACT:
Structures for signal distribution are produced by applying a metallic seed layer over a semiconductor body. An insulating layer is applied over the metallic seed layer and openings in the insulating layer are produced by photolithographic patterning of the insulating layer. Each opening in the insulating layer is trapezoidal in cross section such that an upper portion of the insulating layer is wider than a lower portion of the insulating layer. A conductor is selectively formed over exposed portions of the metallic seed layer. After selectively forming the conductor, the insulating layer is anisotropically etched such that portions of the insulating layer abutting sidewalls of the conductor remain. Alternatively, a second insulating layer can be formed and anisotropically etched.
REFERENCES:
patent: 5468595 (1995-11-01), Livesay
patent: 6018179 (2000-01-01), Gardner et al.
patent: 6524916 (2003-02-01), Scholer et al.
patent: 2004/0185683 (2004-09-01), Nakamura
patent: 2006/0009020 (2006-01-01), Tanaka
Brintzinger Axel
Leiberg Wolfgang
Trovarelli Octavio
Everhart Caridad M
Slater & Matsil L.L.P.
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