Process for producing large-size substrate-based semiconductor m

Details Process for producing large-size substrate-based semiconductor m Process for producing large-size substrate-based semiconductor m

1976-11-01

1978-09-12

Dean, R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29572, 148 15, 148175, 156605, 156612, 156616R, 357 30, 357 59, 427 85, 427 86, 427113, H01L 21477, H01L 2184, H01L 3100

Patent

active

041135326

ABSTRACT:
A process for producing large-size, substrate-based semiconductor material of silicon deposited on a substrate body from the gaseous phase, which comprises the steps of heating a substrate body by direct current passage to deposition temperature, contacting said body with a gaseous silicon-containing mixture to which a dopant has been added, until a deposit having a thickness from about 10 to 200 .mu.m has been formed, subsequently melting 80 to 100% of the deposited silicon layer from the free surface downward, and resolidifying the molten silicon by adjustment of a temperature gradient from the substrate body upward. Large-sized plates obtained by cutting up the semiconductor material are used as solar cells.

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Chu et al., "Polycrystalline Silicon Solar Cells . . . Applications", 11th EEE Photospecialist Conf., May 6-8, 1975, pp. 303-305.
Chicotka et al., "Improving the Metallurgical Quality of Semiconductors" I.B.M. Tech. Discl. Bull., vol. 13, No. 12, May 1971, pp. 3788-3789.
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Chu, T. L., "Polycrystalline Silicon Layers for Solar Cells" J. Vac. Sci. Technol., vol. 12, No. 4, Jul./Aug. 1975, pp. 912-915.
Chu et al., "Polycrystalline Slicon on Coated Steel Substrates" J. Electrochem. Soc., vol. 122, No. 12, Dec. 1975, pp. 1681-1685.
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