Process for producing integrated circuit, and substrate with...

Details Process for producing integrated circuit, and substrate with... Process for producing integrated circuit, and substrate with...

2007-01-16

2007-01-16

Guerrero, Maria F. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S270000, C438S656000, C438S795000

Reexamination Certificate

active

10275087

ABSTRACT:
There is provided a process for producing an integrated circuit, wherein not only can conductive fine particles be deposited efficiently and densely in minute wiring channels and connecting holes but also a circuit of low wiring resistance and high density can be formed and wherein a high-degree integration can be achieved to thereby bring about an economic advantage. In particular, there is provided a process for producing an integrated circuit, comprising coating a substrate provided with wiring channels with a coating liquid for integrated circuit formation containing conductive fine particles to thereby form an integrated circuit on the substrate, wherein the coating liquid for integrated circuit formation while being exposed to ultrasonic waves is applied to the wiring channels.

REFERENCES:
patent: 5219790 (1993-06-01), Miyatake
patent: 5290733 (1994-03-01), Hayasaka et al.
patent: 5785897 (1998-07-01), Toufuku et al.
patent: 6136228 (2000-10-01), Hirai et al.
patent: 6180030 (2001-01-01), Hirai et al.
patent: 6531187 (2003-03-01), Akedo
patent: 6562217 (2003-05-01), Tanaka et al.
patent: 6646331 (2003-11-01), Sakamoto et al.
patent: 6709966 (2004-03-01), Hisatsune et al.
patent: 2-237030 (1990-09-01), None
patent: 5-160018 (1993-06-01), None
patent: 11-97392 (1999-04-01), None
patent: 2000-138188 (2000-05-01), None
patent: 188681 (2000-10-01), None
Wada Yuichi et al. (JP 2000-138188), May 2000, Translation.
Kogure Naoki (JP 11-097392), Apr. 1999, Translation.
“Preparation of Noble Metal Ultrafine Particle Alloy Using Ultrasonic Chemical Action and Analysis of Fine Structure Thereof”, Abstracts of Paper presented before Symposium of General Autumn Meeting held by Metallurgical Society of Japan, p. 70 (1997), English translation of p. 70 attached.
ULVAC Technical Journal, No. 51, 1999, pp. 15-19, English translation of relevant parts attached.

Affiliated with

Also associated with

Rating

Process for producing integrated circuit, and substrate with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing integrated circuit, and substrate with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing integrated circuit, and substrate with... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3726225