Process for producing highly doped semiconductor wafers, and...

Details Process for producing highly doped semiconductor wafers, and... Process for producing highly doped semiconductor wafers, and...

2008-03-11

2008-03-11

Shosho, Callie (Department: 1794)

Stock material or miscellaneous articles

Composite

Of silicon containing

C117S013000, C117S019000, C117S928000, C428S064100, C438S045000, C438S491000, C438S495000, C438S914000

Reexamination Certificate

active

07341787

ABSTRACT:
The invention relates to a process for producing highly doped semiconductor wafers, in which at least two dopants which are electrically active and belong to the same group of the periodic system of the elements are used for the doping. The invention also relates to a semiconductor wafer which is free of dislocations and is doped with at least two electrically active dopants which belong to the same group of the periodic system of the elements.

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