Process for producing high-purity metal targets for LSI electrod

Details Process for producing high-purity metal targets for LSI electrod Process for producing high-purity metal targets for LSI electrod

1984-07-26

1986-10-28

O'Keefe, Veronica

Specialized metallurgical processes, compositions for use therei

Processes

Electrothermic processes

75 05AB, 75 05BB, 75 84, 419 28, 419 29, 428641, 420429, C22B 400

Patent

active

046196951

ABSTRACT:
A high-purity high-melting metal target or high-purity high-melting metal silicide target for LSI electrodes having an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb is provided by a wet purification process followed by a series of dry processings. Preferably the high-melting metal is molybdenum, tungsten, titanium, niobium or tantalum. More preferably, the high-melting metal is molybdenum.

REFERENCES:
patent: 3933474 (1976-01-01), Ham et al.

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