Process for producing group III nitride compound semiconductor

Details Process for producing group III nitride compound semiconductor Process for producing group III nitride compound semiconductor

2006-10-31

2006-10-31

Norton, Nadine (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

C216S077000, C438S341000, C438S481000, C438S722000, C117S952000, C257S190000

Reexamination Certificate

active

07128846

ABSTRACT:
A method including the steps of: modifying at least one part of a sapphire substrate by dry etching to thereby form any one of a dot shape, a stripe shape, a lattice shape, etc. as an island shape on the sapphire substrate; forming an AlN buffer layer on the sapphire substrate; and epitaxially growing a desired Group III nitride compound semiconductor vertically and laterally so that the AlN layer formed on a modified portion of the surface of the sapphire substrate is covered with the desirably Group III nitride compound semiconductor without any gap while the AlN layer formed on a non-modified portion of the surface of the sapphire substrate is used as a seed, wherein the AlN buffer layer is formed by means of reactive sputtering with Al as a target in an nitrogen atmosphere.

REFERENCES:
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6426519 (2002-07-01), Asai et al.
patent: 6489221 (2002-12-01), Gehrke et al.
patent: 6620238 (2003-09-01), Tsuda et al.
patent: 6855620 (2005-02-01), Koike et al.
patent: 1 265 272 (2002-11-01), None
patent: 5-41536 (1993-02-01), None
patent: 5-343741 (1993-12-01), None
patent: 7-273367 (1995-10-01), None
patent: 8-64791 (1996-03-01), None
patent: 2000-357843 (2000-12-01), None
patent: WO 97/11518 (1997-03-01), None
patent: WO 01/48798 (2001-07-01), None
patent: WO 01/69661 (2001-09-01), None
patent: WO 01/69662 (2001-09-01), None
Wolf et al., Silicon Processing for the VLSI Era, 1986, Lattice Press, vol. 1, pp. 110-111.
Prochnow et al., Preparing Precision Ultrafine Sapphire Surfaces: A Practical Method, Aug. 15, 1986, Applied Optics, vol. 25, No. 16, pp. 2639-2640.

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