Process for producing epitaxial silicon wafer and silicon...

Details Process for producing epitaxial silicon wafer and silicon... Process for producing epitaxial silicon wafer and silicon...

2007-08-21

2007-08-21

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S013000, C117S019000

Reexamination Certificate

active

11051112

ABSTRACT:
Firstly, a silicon ingot in which boron and germanium were doped is sliced to prepare a silicon wafer and then the wafer is thermally processed by oxidation to form the thermal oxidation film on the surface layer portion of the wafer. Thereby, the concentration of germanium is enhanced in the vicinity of the interface with the thermal oxidation film of the wafer. Then, the thermal oxidation film is removed from the surface layer portion of the wafer. Further, an epitaxial layer consisting of a silicon single crystal in which a lower concentration of boron than the concentration of boron in the wafer was doped is grown on the shallow surface layer portion of the wafer by an epitaxial growth method. According to the present invention, the doping amount of germanium is reduced and the generation of misfit dislocations is suppressed.

REFERENCES:
patent: 6365461 (2002-04-01), Asayama et al.
patent: 6569237 (2003-05-01), Tanaka et al.
patent: 6709957 (2004-03-01), Asayama et al.

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