Process for producing dielectrically isolated single crystal sil

Details Process for producing dielectrically isolated single crystal sil Process for producing dielectrically isolated single crystal sil

1982-06-18

1984-09-25

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG64, 156DIG80, 156DIG88, 156DIG105, 427 531, 148 15, C30B 108

Patent

active

044734336

ABSTRACT:
Well-oriented device quality silicon is formed on a dielectric material through a specific melting procedure. In this procedure, a body including polycrystalline or amorphous silicon overlying a dielectric is heated to a temperature close to the melting point of silicon. A narrow region of the amorphous or polycrystalline silicon whose length is substantially longer than its width is then melted using an energy source such as a laser. This long, narrow region is propagated through the amorphous or polycrystalline silicon to produce the desired device quality material.

REFERENCES:
patent: 3154623 (1974-10-01), Reich
patent: 4059461 (1977-11-01), Fan et al.
patent: 4309225 (1982-01-01), Fan et al.
patent: 4323417 (1982-04-01), Lam
patent: 4371421 (1983-02-01), Fan et al.
H. W. Lam et al., Single Crystal Silicon-on-Oxide by a Scanning CW Laser Induced Lateral Seeding Process, Sep. 1981, J. Electrochem, Soc: Solid-State Science And Technology, vol. 128, No. 9.
G. K. Celler et al., Seeded Oscillatory Growth of Si over SiO.sub.2 By cw Laser Irradiation, Abstract No. 151, Conference Electrochemical Society Incorporated, Spring Meeting May 7-14, 1982 pp. 245, 246.

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