Process for producing circular gallium arsenide wafer

Details Process for producing circular gallium arsenide wafer Process for producing circular gallium arsenide wafer

1982-05-28

1984-12-18

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG65, C30B 2900

Patent

active

044889305

ABSTRACT:
A process for producing a circular gallium arsenide wafer including the steps of growing a gallium arsenide single-crystal boule in the form of a longitudinal half of a cylinder by the boat method in such a manner that the intersection of the flat surface produced by the boat method and the plane vertical to the direction of crystal growth extends in a <110> direction, slicing the boule into wafers to expose a (100) plane or a plane inclined within 0.5 to 5 degress with respect to the (100) plane, assembling the resulting triangular-like wafers into a triangular-like prism, grinding the opposite edges of the flat surface of the outer periphery of the triangular-like prism of wafers in a direction in which the wafers are assembled; and separating the triangular-like prism into discrete circular wafers.

REFERENCES:
patent: 3475867 (1969-11-01), Walsh
patent: 3520810 (1970-07-01), Plaskett et al.
patent: 3834083 (1974-09-01), Hoshi et al.
patent: 3970494 (1976-07-01), Pritchard
patent: 4084354 (1978-04-01), Grandia et al.
patent: 4239567 (1980-12-01), Winings
Richaros, "Growth of GaAshy Horizontal Zone Melting", 3160, J. of Applied Physics, 600-3.
Moore, Solid State Technology, 2/1975, pp. 40-43.

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