Process for producing and inspecting a lithographic reticle and

Details Process for producing and inspecting a lithographic reticle and Process for producing and inspecting a lithographic reticle and

1997-01-29

1998-12-15

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, 382144, G03F 900

Patent

active

058494405

ABSTRACT:
A process for fabricating a semiconductor device includes the formation of a lithographic reticle (20) having a lithographic pattern (18) overlying a reticle substrate (10). In one embodiment, a reticle inspection database incorporates altered resolution assisting features (30,32) to inspect the lithographic pattern (18). The dimensional difference between the reticle inspection database and the lithographic reticle is substantially equal to the process bias realized during reticle fabrication. Inspection of the lithographic reticle (20) using a reticle inspection database containing altered resolution assisting features reduces the false detection of defects and provides increased sensitivity in the reticle inspection process.

REFERENCES:
patent: 5553273 (1996-09-01), Liebmann
patent: 5631110 (1997-05-01), Shioiri
Cobb, N. & Zakhor, A. "Large area phase-shift mask design", SPIE vol. 2197, p. 348, 1994.
Otto et al. "Automated optical proximity correction--a rules based approach", SPIE vol. 2197, p. 278, 1994.
Patti et al. "Phase-shifting masks: automated design and mask requirements", SPIE vol. 2197 p. 314, 1994.
Stirniman, John P. & Rieger, M.L., "Fast proximity correction with zone sampling", SPIE vol. 2197, p. 294, 1994.

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