Process for producing a stacked capacitor of a dram cell

Details Process for producing a stacked capacitor of a dram cell Process for producing a stacked capacitor of a dram cell

1990-09-14

1992-08-04

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 60, 437228, 437919, 357 236, H01L 2170

Patent

active

051358832

ABSTRACT:
A stacked capacitor of the fin-like structure is provided wherein the plurality of polysilicon layers constituting the storage electrode are connected with each other in the sawtooth-like manner to overcome the structural instability of the fin-like structure. The polysilicon layers constituting the storage electrode are extended overlaying each other, so that the capacity of the capacitor in a highly integrated DRAM may be increased without increasing the area occupied by the capacitor.

REFERENCES:
patent: 4686000 (1987-08-01), Heath
patent: 4953126 (1990-08-01), Ema
patent: 4966684 (1990-10-01), Pfiester

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