Process for producing a semiconductor laser mirror by ionic mach

Details Process for producing a semiconductor laser mirror by ionic mach Process for producing a semiconductor laser mirror by ionic mach

1988-02-12

1989-09-12

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156647, 156648, 1566591, 156662, 437129, 437228, 437962, 20419234, H01L 21308, H01S 319

Patent

active

048656844

ABSTRACT:
A semiconductor (10) is subject to ionic etching (14) through a mask, whereof one side determines the location of the mirror. This mask is constituted by a crystalline layer (12), whereof the side (16) is a crystallographic plane.

REFERENCES:
patent: 4248688 (1981-02-01), Gartner et al.
patent: 4354898 (1982-10-01), Coldren et al.
patent: 4397711 (1983-08-01), Donnelly et al.
patent: 4547956 (1985-10-01), Bouadma et al.
Coldren et al., "GaInAsP/InP Stripe-Geometry Laser with a Reactive Ion-Etched Facet", Applied Physics Letters, vol. 37, No. 8, pp. 581-583, 15 Oct. 1980.
Mikami et al., "CW Operation of 1.5 .mu.m GaInAsP/InP Buried-Heterostructure Laser . . . ", Electronic Letters, vol. 19, No. 6, pp. 213-215, Mar. 1983.
Demidov et al., "Bulk Waveguide Resonators for the Ultraviolet Part of the Spectrum", Soviet Journal of Quantum Electronics, vol. 13, No. 4, pp. 551-554, Apr. 1983.
Bouadma, "GaAs-GaAlAs DH Lasers with Ion Beam-Etched Facet", Second European Conference on Integrated Optics, Conference Pub. No. 227, pp. 24-26.

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