Process for producing a plurality of gate stacks which are...

Details Process for producing a plurality of gate stacks which are... Process for producing a plurality of gate stacks which are...

2006-10-31

2006-10-31

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S591000, C438S595000, C257SE21507, C257SE21592

Reexamination Certificate

active

07129155

ABSTRACT:
Process for producing a plurality of gate stacks approximately the same height and equidistant on a semiconductor substrate. The process includes providing a gate dielectric on the semiconductor substrate and applying and patterning at least a first layer and a second layer, above the first layer, to the gate dielectric to produce the gate stacks. An oblique implantation of an oxidation-inhibiting implantation species is carried out into two opposite, uncovered side faces of the second of the gate stacks, with respectively adjacent gate stacks serving to shadow the uncovered side faces of the first layer of the gate stacks. Oxidation to simultaneously form a first oxide layer on uncovered side faces of the first layer of the gate stacks and a second oxide layer on uncovered side faces of the second layer of the gate stacks is carried out, the thickness of the first oxide layer being greater than the thickness of the second oxide layer.

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