Process for producing a field-effect transistor and...

Details Process for producing a field-effect transistor and... Process for producing a field-effect transistor and...

2007-06-12

2007-06-12

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C257SE21415, C257SE29274, C257SE29275, C257SE21442, C257SE21209

Reexamination Certificate

active

11050411

ABSTRACT:
A substrate supporting a portion of a semiconductor material is used to produce a field-effect transistor. A portion of a temporary material lies between the portion of semiconductor material and the substrate. A gate is formed, which comprises an upper part in rigid connection with the portion of semiconductor material, and at least one bearing part settled on the substrate. The temporary material is removed and replaced with an electrically insulating material. During removal and replacement of the temporary material, the portion of semiconductor material is held in place relative to the substrate by the gate.

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