Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1998-09-30
2000-12-05
Nelms, David
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438681, 438789, 438790, 438793, 438794, 438 3, H01L 2131
Patent
active
06156673&
ABSTRACT:
A ceramic layer, in particular having ferroelectric, dielectric or superconducting properties, uses compounds with a simple structure as precursors and only methanoic acid, acetic acid or propionic acid and, where appropriate, water as solvent.
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Timothy J. Boyle et al.: "Formation of SrBi2Ta209: Part I. Synthesis and characterization of a novel "sol-gel" solution for production of ferroelectric SrBi2Ta209 thin films", Journal of Materials Research, Sep. 1996, vol. 11, No. 9, pp. 2274-2281, XP-002090044.
Hintermaier Frank
Mazure-Espejo Carlos
Berry Renee R
Greenberg Laurence A.
Infineon - Technologies AG
Lerner Herbert L.
Nelms David
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