Process for producing a buried stripe semiconductor laser using

Details Process for producing a buried stripe semiconductor laser using Process for producing a buried stripe semiconductor laser using

1992-02-24

1994-04-19

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437129, H01L 21306

Patent

active

053042832

ABSTRACT:
A process is disclosed for producing a buried stripe semiconductor laser using dry etching. According to the present invention, a heterostructure is formed by a first epitaxy, during which, on a substrate is deposited a confinement layer having a first doping type, an active layer and a protection layer. The protection layer and the active layer are etched by a reactive ion beam etching method using a gaseous mixture of argon, methane and hydrogen and this takes place down to the confinement layer, so as to form a stripe from the active layer. The stripe is buried by a second epitaxy in a semiconductor layer having a second type of doping which is the opposite of the first. Particular utility is found in the area of optical telecommunications, although other utilities are contemplated.

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